Advance Technical InformationPolarTM High Speed
IGBT
with Anti-Parallel Diodefor PDP Sustain Circuit
IXGQ85N33PCD1
VCES= 330 V
= 340 AICP
VCE(sat) ≤ 2.1 V
Symbol Test ConditionsVCESVGEMIC25ICPIDPIC(RMS)SSOA(RBSOA)PCTJTJMTstg
Maximum lead temperature for soldering1.6 mm (0.062 in.) from case for 10 sPlastic bodyMdWeight
Mounting torque
TC = 25°C, IGBT chip capabilityTJ ≤ 150°C, tp ≤ 1 μs, D ≤ 1%TJ ≤ 150°C, tp < 10 μsLead current limit
VGE = 15 V, TVJ = 150°C, RG = 20 ΩClamped inductive load, VCE < 300 VTC = 25°C
TJ = 25°C to 150°C
Maximum Ratings
330±30853404075 ICM = 96150-55 ... +150150
-55 ... +1503002601.3/105.5
Nm/lb.in.
g
≤VVAAAAAW°C°C°C°C
TO-3P
G
C
E(TAB)
C = CollectorTAb = Collector
G = GateE = Emitter
Features
•International standard package•Fast tfi for minimum turn off
switching losses•MOS Gate turn-on-drive simplicity
•Positive dVsat/dt for paralleling
Symbol Test Conditions Characteristic Values(TJ = 25°C unless otherwise specified) Min. Typ. Max.VGE(th)ICESIGESVCE(sat)
IC = 1 mA, VCE = VGEVCE = 330 VVGE = 0 V
VCE = 0 V, VGE = ±20 VVGE = 15V,Note 1
IC = 50 A
TJ = 125°C
IC = 100 A
1.431.471.85
3.0
TJ = 125°C
3.0
6.0
V1μA200μA±100nA2.1
VVV
TJ = 125°C 2.0 V© 2006 IXYS CORPORATION, All rights reserved
DS99610D(02/07)
IXGQ85N33PCD1SymbolTest Conditions(TJ = 25°C unless otherwise specified)gfsCiesCoesCresQgQgeQgctd(on)tritd(off)tfitd(on)tritd(off)tfiRthJCRthCKReverse DiodeSymbolTest ConditionsVFRthJCtrrNote 1: Pulse test, t ≤ 300 μs, duty cycle ≤ 2 %Resistive load, TJ = 125°CIC = 50 A, VGE = 15 VVCE = 240 V, RG = 5 ΩResistive load, TJ = 25°CIC = 50 A, VGE = 15 VVCE = 240 V, RG = 5 ΩIC = 43 A, VGE = 15 V, VCE = 0.5 VCESVCE = 25 V, VGE = 0 V, f = 1 MHzIC = 43 A, VCE = 10 VCharacteristic Values Min. Typ. Max.304922001552580152320438772 20 95 88 130 0.25350SpFpFpFnCnCnCnsnsnsns ns ns ns ns K/WTO-3P (IXTQ) Outline 0.833 K/WCharacteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max.2.02.8VVIF = 20A,VGE = 0 V, Note 1IF = 40A,VGE = 0 V, Note 12.5K/W250nsIXYS reserves the right to change limits, test conditions and dimensions.
IXYS MOSFETs and IGBTs are covered4,835,592
by one or moreof the following U.S. patents:4,850,072
4,881,106
4,931,8445,017,5085,034,796
5,049,9615,063,3075,187,117
5,237,4815,381,0255,486,715
6,162,6656,259,123 B16,306,728 B1
6,404,065 B16,534,3436,583,505
6,683,3446,727,5857,005,734 B2 7,157,338B26,710,405 B26,759,6927,063,975 B26,710,4636,771,478 B27,071,537
IXGQ85N33PCD1Fig. 1. Output Characteristics @ 25 ºC180160140VGE = 15V 13V 11V Fig. 2. Extended Output Characteristics @ 25 ºC300270240210VGE = 15V 13V 11VI C - Amperes9V100807V604020000.511.522.533.545VI C - Amperes120180150120906030001234567107V5V9VVC E - VoltsFig. 3. Output Characteristics @ 125 ºC180160140VGE = 15V 13V 11V9V1.81.71.6 VGE = 15VVC E - VoltsFig. 4. Dependence of VCE(sat) on Temperature VC E (sat)- Normalized1.51.41.31.21.11.00.9I C - Amperes12010080604020000.511.522.53IC = 170A7VIC = 85A5V0.80.73.54-50-250255075IC = 42.5A100125150VCE - VoltsFig. 5. Collector-to-Emitter Voltagevs. Gate-to-Emitter voltage6.05.55.04.5IC = 170A TJ = 25ºC 85A 42.5A 200180160TJ - Degrees CentigradeFig. 6. Input AdmittanceI C - Amperes140120100806040200 TJ = 125ºC 25ºC - 40ºC44.555.566.577.588.599.5VC E - Volts4.03.53.02.52.01.51.0567101112131415VG E - VoltsVG E - Volts© 2006 IXYS CORPORATION, All rights reserved
IXGQ85N33PCD1Fig. 7. Transconductance 60 TJ = - 40ºC5040 25ºC 125ºC160140IC = 85AFig. 8. Resistive Turn-On Rise Timevs. Junction Temperaturet r - Nanoseconds120100806040200g f s - Siemens RG = 5Ω VGE = 15V VCE = 240VIC = 42.5A302010004080120160200240280IC = 21A2535455565758595105115125I C - AmperesFig. 9. Resistive Turn-On Rise Timevs. Collector Current160140 RG = 5Ω VGE = 15VTJ = 125ºCTJ - Degrees CentigradeFig. 10. Resistive Turn-On Rise Timevs. Gate Resistance180160IC = 85At r - Nanosecondst r - Nanoseconds1201008060402020 VCE = 240V14012010080604020 TJ = 125ºC VGE = 15V VCE = 240VIC = 21AIC = 42.5ATJ = 25ºC30405060708090468101214161820I C - AmperesFig. 11. Resistive Turn-On Delay Timevs. Gate Resistance23.523 TJ = 125ºC VGE = 15V VCE = 240VIC = 42.5A180 t d(off) R G - OhmsFig. 12. Resistive Turn-Off SwitchingTime vs. Junction TemperatureIC = 21ASwitching Time - Nanosecondst d ( o n ) - Nanoseconds22.52221.52120.52019.5191601401201008060 t f - - - - - - RG = 5Ω VGE = 15V VCE = 240V IC = 85A IC = 42.5AIC = 85AIC = 21AIC = 21A 42.5A 85A4681012141618202224255075100125150R G - OhmsT J - Degrees CentigradeIXYS reserves the right to change limits, test conditions and dimensions.
IXGQ85N33PCD1Fig. 13. Resistive Turn-Off SwitchingTime vs. Collector Current200240 RG = 5Ω , VGE = 15V VCE = 240V t d(off) , t f - - - - -220Fig. 14. Resistive Turn-off Switching Time vs. Gate Resistance t d(off) , t f - - - - -25ºC, VGE = 15V TJ = 1 VCE = 240VIC = 21A 85A 42.5A 21A 42.5A 85ASwitching Time - NanosecondsSwitching Time - Nanoseconds809018016014012010080604020TJ = 125ºC2001801601401201008060 25ºC < TJ < 125ºCTJ = 25ºC304050607002468101214161820I C - AmperesFig. 15. Reverse-Bias Safe Operating Area1009080161412 VCE = 150V I C = 42.5A I G = 10mAR G- OhmsFig. 16. Gate ChargeI C - Amperes705040302010050100150200250300350TJ = 150ºCRG = 20ΩdV/dT < 10V/nsVG E - Volts601082001020304050607080VC E - VoltsQ G - nanoCoulombsFig. 18. Maximum Transient Thermal Resistance 1.00Fig. 17. Capacitance10000 f = 1 MHzCiesCapacitance - p F1000R ( t h ) J C - ºC / WCoes100Cres0.101005101520253035400.010.000010.00010.0010.010.1110VC E - VoltsPulse Width - Seconds© 2006 IXYS CORPORATION, All rights reserved
