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Power Transistors2SB1255Silicon PNP epitaxial planar type DarlingtonFor power amplificationComplementary to 2SD15Unit: mm15.0±0.311.0±0.25.0±0.23.2sFeaturesqqqq16.2±0.512.53.5Solder DipOptimum for 90W HiFi outputHigh foward current transfer ratio hFE: 5000 to 30000Low collector to emitter saturation voltage VCE(sat): < –2.5VFull-pack package which can be installed to the heat sink withone screw0.721.0±0.515.0±0.2φ3.2±0.12.0±0.22.0±0.11.1±0.15.45±0.30.6±0.2sAbsolute Maximum Ratings (TC=25˚C)ParameterCollector to base voltageCollector to emitter voltageEmitter to base voltagePeak collector currentCollector currentCollector powerTC=25°CdissipationTa=25°CJunction temperatureStorage temperatureSymbolVCBOVCEOVEBOICPICPCTjTstgRatings–160–140–8–12–151003150–55 to +150UnitVVVAAW˚C˚C10.9±0.51231:Base2:Collector3:EmitterTOP–3 Full Pack Package(a)Internal ConnectionCBEsElectrical Characteristics (TC=25˚C)ParameterCollector cutoff currentEmitter cutoff currentCollector to emitter voltageForward current transfer ratioCollector to emitter saturation voltageBase to emitter saturation voltageTransition frequencyTurn-on timeStorage timeFall time*hFE2 Rank classificationSymbolICBOICEOIEBOVCEOhFE1hFE2*VCE(sat)VBE(sat)fTtontstgtfConditionsVCB = –160V, IE = 0VCE = –140V, IB = 0VEB = –5V, IC = 0IC = –30mA, IB = 0VCE = –5V, IC = –1AVCE = –5V, IC = –7AIC = –7A, IB = –7mAIC = –7A, IB = –7mAVCE = –10V, IC = – 0.5A, f = 1MHzIC = –7A, IB1 = –7mA, IB2 = 7mA,VCC = –50Vmintypmax–100–100–100UnitµAµAµAV–1402000500030000–2.5–3.0201.01.51.2VVMHzµsµsµsRankhFE2QP5000 to 150008000 to 300001
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Power TransistorsPC—Ta120–12(1) TC=Ta(2) With a 100 × 100 × 2mmAl heat sink(3) Without heat sink(PC=3W)(1)IB=–2mA–1mA– 0.9mA– 0.8mA– 0.7mA– 0.6mA– 0.5mA–4– 0.4mA– 0.3mA–2– 0.2mA2SB1255IC—VCECollector to emitter saturation voltage VCE(sat) (V)TC=25˚C–100VCE(sat)—ICIC/IB=1000Collector power dissipation PC (W)100–10–3080Collector current IC (A)–8–10TC=100˚C–325˚C–25˚C60–0–120(2)(3)– 0.3002040608010012014016000–2–4–6–8–10–12– 0.1– 0.1– 0.3–1–3–10–30–100Ambient temperature Ta (˚C)Collector to emitter voltage VCE (V)Collector current IC (A)VBE(sat)—IC–100hFE—IC100000Cob—VCBCollector output capacitance Cob (pF)VCE=–5V25˚C1000IE=0f=1MHzTC=25˚CBase to emitter saturation voltage VBE(sat) (V)IC/IB=1000–30Forward current transfer ratio hFE30000TC=100˚C30010000–10–25˚C100300010003001003010– 0.01– 0.03– 0.1– 0.3–3TC=–25˚C–1100˚C25˚C3010– 0.33– 0.1– 0.1– 0.3–1–3–10–30–100–1–3–101–1–3–10–30–100Collector current IC (A)Collector current IC (A)Collector to base voltage VCB (V)ton, tstg, tf — IC10030Pulsed tw=1msDuty cycle=1%IC/IB=1000(–IB1=IB2)VCC=–50VTC=25˚CArea of safe operation (ASO)–100–30Non repetitive pulseTC=25˚CICPIC–3–110msDCt=1msSwitching time ton,tstg,tf (µs)103tstgtf1ton0.30.10.030.01Collector current IC (A)–16–10– 0.3– 0.1– 0.03– 0.01–10–4–8–12–3–10–30–100–300–1000Collector current IC (A)Collector to emitter voltage VCE (V)2
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Power TransistorsRth(t)—t10000Note: Rth was measured at Ta=25˚C and under natural convection.(1) PT=10V × 0.3A (3W) and without heat sink(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink2SB1255Thermal resistance Rth(t) (˚C/W)1000100(1)10(2)10.110–410–310–210–1110102103104Time t (s)3
