ADVANCEDLINEARDEVICES, INC.ALD1106/ALD1116QUAD/DUAL N-CHANNEL MATCHED PAIR MOSFET ARRAY
GENERAL DESCRIPTION
The ALD1106/ALD1116 are monolithic quad/dual N-channel enhance-ment mode matched MOSFET transistor arrays intended for a broad rangeof precision analog applications. The ALD1106/ALD1116 offer high inputimpedance and negative current temperature coefficient. The transistorpairs are matched for minimum offset voltage and differential thermalresponse, and they are designed for switching and amplifying applicationsin +2V to +12V systems where low input bias current, low input capacitanceand fast switching speed are desired. These MOSFET devices feature verylarge (almost infinite) current gain in a low frequency, or near DC, operatingenvironment. The ALD1106/ALD1116 are building blocks for differentialamplifier input stages, transmission gates, and multiplexer applications,current sources and many precision analog circuits.FEATURES
•Low threshold voltage of 0.7V•Low input capacitance•Low Vos 2mV typical
•High input impedance -- 1014Ω typical
•Negative current (IDS) temperature coefficient•Enhancement-mode (normally off)•DC current gain 109
•Low input and output leakage currentsORDERING INFORMATION
Operating Temperature Range*
-55°C to +125°C0°C to +70°C0°C to +70°C8-Pin CERDIPPackageALD1116 DA14-Pin CERDIPPackageALD1106 DB
8-Pin Plastic DipPackageALD1116 PA14-Pin Plastic DipPackageALD1106 PB
8-Pin SOICPackageALD1116 SA14-Pin SOICPackageALD1106 SB
APPLICATIONS••••••••
Precision current mirrorsPrecision current sourcesVoltage choppers
Differential amplifier input stageVoltage comparatorData convertersSample and Hold
Analog signal processing
PIN CONFIGURATIONALD1116DN1GN1SN1V-1234DA, PA, SA PACKAGE8DN27 GN265SN2V+ALD1106DN1GN1SN1V-DN4GN4SN41234567DB, PB, SB PACKAGE14DN2113 GN212111098SN2V+DN3GN3SN3* Contact factory for industrial temperature range.
BLOCK DIAGRAM
ALD1106V+ (11)DN1 (1)DN2 (14)BLOCK DIAGRAMALD1116V+ (5)DN3 (10)DN4 (5)DN1 (1)~~DN2 (8)GN1 (2)GN2 (13)GN3 (9)GN4 (6)GN1 (2)GN2 (7)SN1 (3)V- (4)SN2 (12)SN3 (8)V- (4)SN4 (7)SN1 (3)V- (4)SN2 (6)© 2003 rev1103 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, CA 940 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
ABSOLUTE MAXIMUM RATINGS
Drain-source voltage, VDSGate-source voltage, VGSPower dissipation
Operating temperature rangeStorage temperature rangeLead temperature, 10 seconds
13.2V 13.2V 500 mW 0°C to +70°C-55°C to +125°C-65°C to +150°C +260°C
PA, SA, PB, SB packageDA, DB package
OPERATING ELECTRICAL CHARACTERISTICSTA = 25°C unless otherwise specified
ALD1106
ParameterGate ThresholdVoltageOffset VoltageVGS1-VGS2Gate ThresholdTemperatureDrift2On DrainCurrent
Transconductance
ALD1116
Max1.0
Min0.4
Typ0.7
Max1.0
UnitV
TestConditions
IDS = 1.0µA VGS = VDS
SymbolVT
Min0.4
Typ0.7
VOS210210mVIDS = 10µA VGS = VDS
TCVT-1.2-1.2mV/°C
IDS (ON)3.04.83.04.8mAVGS = VDS = 5V
GIS∆GfsGOS
1.01.80.5200
1.01.80.5200
mmhoVDS = 5V IDS= 10mA%µmho
VDS = 5V IDS = 10mA
MismatchOutput
Conductance
Drain Source RDS (ON)On ResistanceDrain SourceOn ResistenceMismatchDrain SourceBreakdownVoltageOff DrainCurrent1
Gate LeakageCurrentInput
Capacitance2Notes:
1
350500350500ΩVDS = 0.1V VGS = 5V
∆DS (ON)
0.50.5%
VDS = 0.1V VGS = 5V
BVDSSIDS (OFF)IGSSCISS
12
10
40041013
12
10
40041013
VpAnApAnApF
IDS = 1.0µA VGS = 0VVDS =12V VGS = 0VTA = 125°C
VDS = 0V VGS = 12VTA = 125°C
0.11
0.11
2
Consists of junction leakage currents Sample tested parameters
ALD1106/ALD1116Advanced Linear Devices2
TYPICAL PERFORMANCE CHARACTERISITCS
OUTPUT CHARACTERISTICS 1000LOW VOLTAGE OUTPUTCHARACTERISTICSDRAIN SOURCE CURRENT (µA)VBS = 0VTA = 25°CVGS = 12V6V4V2VDRAIN SOURCE CURRENT (mA)2015 VBS = 0V TA = 25°C VGS = 12V 10V8V5000106V4V2V5002468-5001012-1000-160-80080160DRAIN SOURCE VOLTAGE (V)DRAIN SOURCE VOLTAGE (mV) FORWARD TRANSCONDUCTANCE vs. DRAIN SOURCE VOLTAGE FORWARD TRANSCONDUCTANCE(mmho)TRANSFER CHARACTERISTICWITH SUBSTRATE BIAS2020105210.50.2024 IDS = 1mA681012 = +125°CTA IDS = 10mATA = +25°CDRAIN SOURCE CURRENT(µA)VBS = 0Vf = 1KHz15VBS = 0V 10-2V-4V-6V-8V-10V5 VGS = VDS TA = 25°C-12V000.81.62.43.24.0 GATE SOURCE VOLTAGE (V)DRAIN SOURCE VOLTAGE (V)DRAIN SOURCE ON RESISTANCE (KΩ)100DRAIN SOURCE ON RESISTANCERDS (ON) vs. GATE SOURCE VOLTAGEOFF DRAIN SOURCE CURRENT(pA)1000VDS = 0.2VVBS = 0VOFF DRAIN CURRENT vs. AMBIENT TEMPERATUREVDS = +12VVGS = VBS = 0V10010TA = +125°C1100.10TA = +25°C246810121 -50-250+25+50+75+100+125GATE SOURCE VOLTAGE (V)AMBIENT TEMPERATURE (°C)ALD1106/ALD1116Advanced Linear Devices3
ALD1106/ALD1116Advanced Linear Devices4
