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专利名称：Method of producing a semiconductor laser发明人：Takami, Akihiro Mitsubishi Denki申请号：EP883079.0申请日：19880825公开号：EP0306225A3公开日：190614
专利附图：
摘要：A method of producing a semiconductor laser comprises a process ofproducing at least a support layer (8) and a mask layer (9); a process of producing anoverhung portion (11) of mask layer (9) by etching these layers and side-etching thesupport layer (8) at above the semiconductor substrate (1) at the neighborhood of the
resonator end surface; and a process of growing a lower cladding layer (4,4a), an activelayer (5,5a), and an upper cladding layer (6,6a) successively on the substrate (1) by anMOCVD method; whereby a doublehetero junction structure in which the thicknesses ofthe respective layers at the neighborhood of the light emission end surface are less thanthose at the inside and central portion of the chip is obtained.
申请人：MITSUBISHI DENKI KABUSHIKI KAISHA
地址：2-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100 JP
国籍：JP
代理机构：Beresford, Keith Denis Lewis
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