专利内容由知识产权出版社提供
专利名称：Semiconductor device with borderless
contact structure and method ofmanufacturing the same
发明人：Sung-Un Kwean,Jae-Seung Hwang申请号：US10172354申请日：20020614
公开号：US20020190316A1公开日：20021219
专利附图：
摘要：A semiconductor device comprising a borderless contract structure and amethod of manufacturing the same. An etch-protecting layer is formed on a
semiconductor substrate having gate electrodes formed on an active area of thesubstrate. Spacers are formed on the etch-protecting layer, and removed afterperforming a source/drain ion-implantation process to secure a region for forming acontact hole between the gate electrodes. After sequentially forming an etch-stoppinglayer and an insulating interlayer on a resultant structure, the etch-stopping layer andthe insulating interlayer are etched to form the first contact hole which exposes a surfaceof the semiconductor substrate between gate electrodes and a second contact hole forthe borderless contact which exposes the surface of the semiconductor substrateadjacent to the field oxide layer and a portion of a surface of the field oxide layer.
申请人：SAMSUNG ELECTRONICS, CO., LTD.
更多信息请下载全文后查看
