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FDN327NOctober 2001FDN327NN-Channel 1.8 Vgs Specified PowerTrench® MOSFETGeneral DescriptionThis 20V N-Channel MOSFET uses Fairchild’s highvoltage PowerTrench process. It has been optimized forpower management applications.Features• 2 A, 20 V. RDS(ON) = 70 mΩ @ VGS = 4.5 VRDS(ON) = 80 mΩ @ VGS = 2.5 V RDS(ON) = 120 mΩ @ VGS = 1.8 VApplications• Load switch• Battery protection• Power management• Low gate charge (4.5 nC typical)• Fast switching speed• High performance trench technology for extremelylow RDS(ON)DDSSuperSOT -3TMGAoGSAbsolute Maximum Ratings T=25C unless otherwise notedSymbolVDSSVGSSIDPDTJ, TSTGParameterDrain-Source VoltageGate-Source VoltageDrain Current– Continuous– PulsedPower Dissipation for Single Operation(Note 1a)(Note 1b)(Note 1a)Ratings20± 8280.50.46–55 to +150UnitsVVAW°COperating and Storage Junction Temperature RangeThermal CharacteristicsRθJARθJCThermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case(Note 1a)(Note 1)25075°C/W°C/WPackage Marking and Ordering InformationDevice Marking327DeviceFDN327NReel Size7’’Tape width8mmQuantity3000 units©2001 Fairchild Semiconductor CorporationFDN327N Rev C (W)
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FDN327NElectrical CharacteristicsSymbolBVDSS∆BVDSS ∆TJIDSSIGSSFIGSSRTA = 25°C unless otherwise notedParameterDrain–Source Breakdown VoltageBreakdown Voltage TemperatureCoefficientZero Gate Voltage Drain CurrentGate–Body Leakage, ForwardGate–Body Leakage, Reverse(Note 2)Test ConditionsVGS = 0 V, ID = 250 µAMin20TypMaxUnitsVOff CharacteristicsID = 250 µA,Referenced to 25°CVDS = 16 V,VGS = 8 V,VGS = –8 V,VGS = 0 VVDS = 0 VVDS = 0 V121100–100mV/°CµAnAnAOn CharacteristicsVGS(th)∆VGS(th) ∆TJRDS(on)Gate Threshold VoltageGate Threshold VoltageTemperature CoefficientStatic Drain–SourceOn–ResistanceVDS = VGS, ID = 250 µA0.40.7–3404965551.5VmV/°CID = 250 µA,Referenced to 25°CVGS = 4.5 V, ID = 2.0 AVGS = 2.5 V, ID = 1.9 AVGS = 1.8 V, ID = 1.6 AVGS = 4.5V, ID = 2 A, TJ = 125°CVGS = 4.5V,VDS = 5 VVDS = 5V, ID = 2 A7080120103mΩID(on)gFSOn–State Drain CurrentForward Transconductance811ASDynamic CharacteristicsCissCossCrssInput CapacitanceOutput CapacitanceReverse Transfer Capacitance(Note 2)VDS = 10 V, f = 1.0 MHzV GS = 0 V4238748pFpFpFSwitching Characteristicstd(on)trtd(off)tfQgQgsQgdTurn–On Delay TimeTurn–On Rise TimeTurn–Off Delay TimeTurn–Off Fall TimeTotal Gate ChargeGate–Source ChargeGate–Drain ChargeVDD = 10 V,VGS = 4.5 V,ID = 1 A,RGEN = 6 Ω66.514212132946.3nsnsnsnsnCnCnCVDS = 10 V, VGS = 4.5 VID = 2 A,4.50.0.95Drain–Source Diode Characteristics and Maximum RatingsISVSDMaximum Continuous Drain–Source Diode Forward CurrentDrain–Source Diode ForwardVoltageVGS = 0 V,IS = 0.42 A(Note 2)0.420.61.2AVNotes:1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface ofthe drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.a) 250°C/W when mounted on a0.02 in2 pad of 2 oz. copper.b) 270°C/W when mounted on aminimum pad.Scale 1 : 1 on letter size paper2.Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%FDN327N Rev C (W)
元器件交易网www.cecb2b.comFDN327NTypical Characteristics162RDS(ON), NORMALIZEDDRAIN-SOURCE ON-RESISTANCEVGS = 4.5V3.0V2.5V2.0V1.81.61.42.5V1.210.800.511.522.533.5VGS = 1.8VID, DRAIN CURRENT (A)121.8V82.0V3.0V3.5V4.5V40VDS, DRAIN-SOURCE VOLTAGE (V)048ID, DRAIN CURRENT (A)1216Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation withDrain Current and Gate Voltage.0.18RDS(ON), ON-RESISTANCE (OHM)1.6RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCEID = 2AVGS = 4.5VID = 1A0.141.41.20.1TA = 125oC0.06TA = 25C0.0212345VGS, GATE TO SOURCE VOLTAGE (V)o10.80.6-50-250255075100o125150TJ, JUNCTION TEMPERATURE (C)Figure 3. On-Resistance Variation withTemperature.12Figure 4. On-Resistance Variation withGate-to-Source Voltage.100IS, REVERSE DRAIN CURRENT (A)VDS = 5VID, DRAIN CURRENT (A)9TA =-55Co25C125oCoVGS = 0V10TA = 125oC125oC0.1-55C0.01o630.00100.511.522.5VGS, GATE TO SOURCE VOLTAGE (V)0.000100.20.40.60.811.21.4VSD, BODY DIODE FORWARD VOLTAGE (V)Figure 5. Transfer Characteristics.Figure 6. Body Diode Forward Voltage Variationwith Source Current and Temperature.FDN327N Rev C (W)
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FDN327NTypical Characteristics5VGS, GATE-SOURCE VOLTAGE (V)ID = 2A4VDS = 5V10VCAPACITANCE (pF)15V600500400300200COSS100CRSS0f = 1MHzVGS = 0 VCISS32100246Qg, GATE CHARGE (nC)048121620VDS, DRAIN TO SOURCE VOLTAGE (V)Figure 7. Gate Charge Characteristics.P(pk), PEAK TRANSIENT POWER (W)10020Figure 8. Capacitance Characteristics.ID, DRAIN CURRENT (A)10RDS(ON) LIMIT1ms10ms100µs15SINGLE PULSERθJA = 270°C/WTA = 25°C1VGS = 4.5VSINGLE PULSERθJA = 270C/WTA = 25C0.010.11oo100ms1sDC100.150101000.0010.010.11t1, TIME (sec)101001000VDS, DRAIN-SOURCE VOLTAGE (V)Figure 9. Maximum Safe Operating Area.Figure 10. Single Pulse MaximumPower Dissipation.r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE1D = 0.50.2RθJA(t) = r(t) + RθJARθJA = 270 °C/W0.10.10.050.020.01P(pk)t1t2SINGLE PULSE0.01TJ - TA = P * RθJA(t)Duty Cycle, D = t1 / t20.0010.00010.0010.010.11101001000Figure 11. Transient Thermal Response Curve.Thermal characterization performed using the conditions described in Note 1b.Transient thermal response will change depending on the circuit board design.FDN327N Rev C (W)
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TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.ACEx™Bottomless™CoolFET™CROSSVOLT™DenseTrench™DOME™EcoSPARK™E2CMOSTMEnSignaTMFACT™FACT Quiet Series™DISCLAIMERFAST®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN™POP™Power247™PowerTrench®QFET™QS™QT Optoelectronics™Quiet Series™SILENT SWITCHER®SMART START™STAR*POWER™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET®VCX™STAR*POWER is used under licenseFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or2. A critical component is any component of a lifesystems which, (a) are intended for surgical implant intosupport device or system whose failure to perform canthe body, or (b) support or sustain life, or (c) whosebe reasonably expected to cause the failure of the lifefailure to perform when properly used in accordancesupport device or system, or to affect its safety orwith instructions for use provided in the labeling, can beeffectiveness.reasonably expected to result in significant injury to theuser.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet IdentificationAdvance InformationProduct StatusFormative orIn DesignDefinitionThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.PreliminaryFirst ProductionNo Identification NeededFull ProductionObsoleteNot In ProductionThis datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Rev. H4
