专利内容由知识产权出版社提供
专利名称：Method of forming electrically isolated
structures using thin dielectric coatings
发明人：Dennis R. Smalley,Adam L. Cohen,Ananda H.
Kumar,Michael S. Lockard
申请号：US11325405申请日：20060103
公开号：US20060226015A1公开日：20061012
专利附图：
摘要：Electrochemical fabrication processes and apparatus for producing multi-layerstructures where each layer includes the deposition of at least two materials and wherein
the formation of at least some layers including operations for providing coatings ofdielectric material that isolate at least-portions of a first conductive material from (1)other portions of the first conductive material, (2) a second conductive material, or (3)another dielectric material, and wherein the thickness of the dielectric coatings are thincompared to the thicknesses of the layers used in forming the structures. In somepreferred embodiments, portions of each individual layer are encapsulated by dielectricmaterial while in other embodiments only boundaries between distinct regions ofmaterials are isolated from one another by dielectric barriers.
申请人：Dennis R. Smalley,Adam L. Cohen,Ananda H. Kumar,Michael S. Lockard
地址：Newhall CA US,Van Nuys CA US,Fremont CA US,Lake Elizabeth CA US
国籍：US,US,US,US
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