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专利名称：MICROSTRUCTURE AND MICROSTRUCTURE
PRODUCTION METHOD
发明人：Kosuke YAMASHITA,Yusuke HATANAKA申请号：US13165381申请日：20110621
公开号：US20110311800A1公开日：20111222
专利附图：
摘要：A microstructure enabling provision of an anisotropic conductive membercapable of reducing wiring defects and a method of producing such microstructure. Themicrostructure includes through-holes formed in an insulating matrix and filled with a
metal and an insulating substance. The through-holes have a density of 1×10to
1×10holes/mm, a mean opening diameter of 10 nm to 5000 nm, and a mean depth of 10μm to 1000 μm. The sealing ratio of the through-holes as attained by the metal alone is80% or more, and the sealing ratio of the through-holes as attained by the metal and theinsulating substance is 99% or more. The insulating substance is at least one kindselected from the group consisting of aluminum hydroxide, silicon dioxide, metalalkoxide, lithium chloride, titanium oxide, magnesium oxide, tantalum oxide, niobiumoxide, and zirconium oxide.
申请人：Kosuke YAMASHITA,Yusuke HATANAKA
地址：Shizuoka JP,Shizuoka JP
国籍：JP,JP
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