PSMN7R6-60PS

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PSMN7R6-60PS

N-channel 60 V 7.8 mΩ standard level MOSFET

Rev. 03 — 28 October 2010

Product data sheet

1.Product profile

1.1General description

Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

1.2Features and benefits

󰂄High efficiency due to low switching and conduction losses

󰂄Suitable for standard level gate drive sources

1.3Applications

󰂄DC-to-DC converters󰂄Load switching

󰂄Motor control

󰂄Server power supplies

1.4Quick reference data

Table 1.SymbolVDSIDPtotRDSon

Quick reference dataParameter

drain-source voltagedrain current

total power dissipationdrain-source on-state resistance

Conditions

Tj≥25°C; Tj≤175°CTmb=25°C; VGS=10V; see Figure 1

Tmb=25°C; see Figure 2VGS=10V; ID=25A; Tj=25°C; see Figure 13; see Figure 9

VGS=10V; ID=25A;

VDS=30V;seeFigure 15; see Figure 14

Min----Typ---5.9

MaxUnit60921497.8

VAWmΩ

Static characteristics

Dynamic characteristicsQGD

gate-drain charge

-10.6-nC

Avalanche ruggednessEDS(AL)S

non-repetitive VGS=10V; Tj(init)=25°C; drain-source avalanche ID=92A; Vsup≤100V;

RGS=50Ω; unclampedenergy

--110

NXP Semiconductors

PSMN7R6-60PS

N-channel 60 V 7.8 mΩ standard level MOSFET

2.Pinning information

Table 2.Pin123mb

Pinning informationSymbolDescriptionGDSD

gatedrainsource

mounting base; connected to drain

DSimplified outlineGraphic symbol

Gmbb076S123

SOT78 (TO-220AB)

3.Ordering information

Table 3.

Ordering information

PackageName

PSMN7R6-60PS

TO-220AB

Description

plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

VersionSOT78

Type number

4.Limiting values

Table 4.SymbolVDSVDGRVGSIDIDMPtotTstgTjISISMEDS(AL)S

Limiting values

Parameter

drain-source voltagedrain-gate voltagegate-source voltagedrain currentpeak drain currenttotal power dissipationstorage temperaturejunction temperaturesource currentpeak source currentnon-repetitive drain-source avalanche energy

In accordance with the Absolute Maximum Rating System (IEC 60134).

Conditions

Tj≥25°C; Tj≤175°CRGS=20kΩ

VGS=10V; Tmb=100°C; see Figure 1VGS=10V; Tmb=25°C; see Figure 1pulsed; tp≤10µs; Tmb=25°C; see Figure 3Tmb=25°C; see Figure 2

Min---20-----55-55

Tmb=25°C

pulsed; tp≤10µs; Tmb=25°CVGS=10V; Tj(init)=25°C; ID=92A; Vsup≤100V; RGS=50Ω; unclamped

---Max60602065923149175175923110

UnitVVVAAAW°C°CAAmJ

Source-drain diode

Avalanche ruggedness

Product data sheetRev. 03 — 28 October 20102 of 14

NXP Semiconductors

PSMN7R6-60PS

N-channel 60 V 7.8 mΩ standard level MOSFET

100ID(A)80003aad661120Pder(%)8003aa16604040200050100150200Tmb (°C)0050100150Tmb (°C)200Fig 1.Continuous drain current as a function of mounting base temperatureFig 2.Normalized total power dissipation as a function of mounting base temperature003aad700 103ID(A) 102Limit RDSon = VDS / ID10 μs100 μs 10DC 11 ms10 ms100 ms10−110−2 1 10VDS (V) 102Fig 3.Safe operating area; continuous and peak drain currents as a function of drain-source voltagePSMN7R6-60PSAll information provided in this document is subject to legal disclaimers.© NXP B.V. 2010. All rights reserved.

Product data sheetRev. 03 — 28 October 20103 of 14

NXP Semiconductors

PSMN7R6-60PS

N-channel 60 V 7.8 mΩ standard level MOSFET

5.Thermal characteristics

Table 5.SymbolRth(j-mb)

Thermal characteristics

Parameter

thermal resistance from junction to mounting base

Conditionssee Figure 4

Min-

Typ0.49

Max1.01

UnitK/W

1Zth(K/W)10−1003aad662δ = 0.50.20.10.020.05single shottpT10−2Pδ =tp10−310−610−510−410−310−210−1Tttp (s)1Fig 4.Transient thermal impedance from junction to mounting base as a function of pulse durationPSMN7R6-60PSAll information provided in this document is subject to legal disclaimers.© NXP B.V. 2010. All rights reserved.

Product data sheetRev. 03 — 28 October 20104 of 14

NXP Semiconductors

PSMN7R6-60PS

N-channel 60 V 7.8 mΩ standard level MOSFET

6.Characteristics

Table 6.SymbolV(BR)DSSVGS(th)VGSth

Characteristics

Parameter

ConditionsMin546021------------

Typ--3--0.05-2213.35.90.9838.712.96.9610.65.62651

Max--4-4.610100100100187.8--------

UnitVVVVVµAµAnAnAmΩmΩΩnCnCnCnCnCVpF

Static characteristics

drain-source breakdown voltageID=250µA;VGS=0V; Tj=-55°C

ID=250µA;VGS=0V; Tj=25°C

gate-source threshold voltagegate-source threshold voltage

ID=1mA; VDS=VGS; Tj=25°C;

see Figure 10; see Figure 11ID=1mA; VDS=VGS; Tj=175°C; see Figure 11

ID=1mA; VDS=VGS; Tj=-55°C; see Figure 11

IDSSIGSSRDSon

drain leakage currentgate leakage currentdrain-source on-state resistance

VDS=60V;VGS=0V; Tj=25°CVDS=60V;VGS=0V; Tj=125°CVGS=20V; VDS=0V; Tj=25°C

VGS=-20V;VDS=0V; Tj=25°CVGS=10V; ID=25A; Tj=175°C; see Figure 12

VGS=10V; ID=25A; Tj=25°C; see Figure 13; see Figure 9f=1MHzID=25A; VDS=30V;VGS=10V; see Figure 14; see Figure 15

RGQG(tot)QGSQGS(th)QGS(th-pl)QGDVGS(pl)Ciss

gate resistancetotal gate chargegate-source chargepre-threshold gate-source charge

post-threshold gate-source charge

gate-drain charge

gate-source plateau voltageinput capacitance

Dynamic characteristics

ID=25A; VDS=30V;VGS=10V; see Figure 15; see Figure 14ID=25A; VDS=30V;seeFigure 14; see Figure 15

VDS=30V;VGS=0V; f=1MHz; Tj=25°C;seeFigure 16; see Figure 8

VDS=30V;VGS=0V; f=1MHz; Tj=25°C;seeFigure 16

VDS=30V;VGS=0V; f=1MHz; Tj=25°C;seeFigure 16; see Figure 8

VDS=30V;RL=1.2Ω; VGS=10V; RG(ext)=4.7Ω

---

CossCrss

output capacitance

reverse transfer capacitance

342183

pFpF

td(on)trtd(off)tf

turn-on delay timerise time

turn-off delay timefall time

----

19213713

----

nsnsnsns

Product data sheetRev. 03 — 28 October 20105 of 14

NXP Semiconductors

PSMN7R6-60PS

N-channel 60 V 7.8 mΩ standard level MOSFET

Table 6.SymbolVSDtrrQr

Characteristics …continued

Parameter

source-drain voltagereverse recovery timerecovered charge

Conditions

IS=25A;VGS=0V;Tj=25°C; see Figure 17

IS=25A;dIS/dt=100A/µs; VGS=0V;VDS=30V

Min---

Typ0.80.456

Max1.2--

UnitVnsnC

Source-drain diode

100ID(A)8015108.06.0003aad663160gfs(S)120003aad6695.5605.0404020VGS (V) = 4.580000.511.5VDS (V)20Fig 6.020406080ID (A)100Fig 5.Output characteristics: drain current as a function of drain-source voltage; typical values003aad665Forward transconductance as a function of drain current; typical values003aad6100ID(A)804000C (pF)3000Ciss60200040Tj = 175 °CTj = 25 °C1000Crss200024VGS (V)60051015VGS (V)20Fig 7.Transfer characteristics: drain current as a function of gate-source voltage; typical valuesFig 8.Input and reverse transfer capacitances as a function of gate-source voltage; typical valuesPSMN7R6-60PSAll information provided in this document is subject to legal disclaimers.© NXP B.V. 2010. All rights reserved.

Product data sheetRev. 03 — 28 October 20106 of 14

NXP Semiconductors

PSMN7R6-60PS

N-channel 60 V 7.8 mΩ standard level MOSFET

20RDSon(mΩ)16003aad66610−1ID(A)10−2mintypmax03aa351210−3810−4410−50051015VGS (V)2010−6024VGS (V)6Fig 9.Drain-source on-state resistance as a function of gate-source voltage; typical values5003aad280Fig 10.Sub-threshold drain current as a function of gate-source voltage2.4a2003aad696VGS(th)(V)4max1.63typ1.22min0.810.40−60060120Tj (°C)1800-60060120Tj (°C)180Fig 11.Gate-source threshold voltage as a function of junction temperatureFig 12.Normalized drain-source on-state resistance factor as a function of junction temperature.PSMN7R6-60PSAll information provided in this document is subject to legal disclaimers.© NXP B.V. 2010. All rights reserved.

Product data sheetRev. 03 — 28 October 20107 of 14

NXP Semiconductors

PSMN7R6-60PS

N-channel 60 V 7.8 mΩ standard level MOSFET

304.5RDSon(mΩ)205.0003aad66710VGS(V)8VDS = 12 V003aad6715.530 V48 V106.02VGS (V) = 150020406010.08.080100001020304050QG (nC)ID (A)Fig 13.Drain-source on-state resistance as a function of drain current; typical valuesFig 14.Gate-source voltage as a function of gate charge; typical values 104003aad668VDSIDVGS(pl)VGS(th)VGSQGS1QGS2QGDQG(tot)003aaa508C (pF)Ciss 103QGSCossCrss 10210−210−1 1 10 102VDS (V)Fig 15.Gate charge waveform definitionsFig 16.Input, output and reverse transfer capacitances as a function of drain-source voltage; typical valuesPSMN7R6-60PSAll information provided in this document is subject to legal disclaimers.© NXP B.V. 2010. All rights reserved.

Product data sheetRev. 03 — 28 October 20108 of 14

NXP Semiconductors

PSMN7R6-60PS

N-channel 60 V 7.8 mΩ standard level MOSFET

100IS(A)80003aad6706040Tj = 175 °CTj = 25 °C20000.30.60.9VSD (V)1.2Fig 17.Source (diode forward) current as a function of source-drain (diode forward) voltage; typical valuesPSMN7R6-60PSAll information provided in this document is subject to legal disclaimers.© NXP B.V. 2010. All rights reserved.

Product data sheetRev. 03 — 28 October 20109 of 14

NXP Semiconductors

PSMN7R6-60PS

N-channel 60 V 7.8 mΩ standard level MOSFET

7.Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220ABSOT78EpqD1AA1mountingbaseDL1(1)b1(2)(3×)b2(2)(2×)123L2(1)QLb(3×)eec05scale10 mmDIMENSIONS (mm are the original dimensions)UNITmmA4.74.1A11.401.25b0.90.6b1(2)1.61.0b2(2)1.31.0c0.70.4D16.015.2D16.65.9E10.39.7e2.54L15.012.8L1(1)3.302.79L2(1)max.3.0p3.83.5q3.02.7Q2.62.2Notes1. Lead shoulder designs may vary.2. Dimension includes excess dambar.OUTLINEVERSIONSOT78REFERENCESIECJEDEC3-lead TO-220ABJEITASC-46EUROPEANPROJECTIONISSUE DATE08-04-2308-06-13Fig 18.Package outline SOT78 (TO-220AB)

Product data sheetRev. 03 — 28 October 201010 of 14

NXP Semiconductors

PSMN7R6-60PS

N-channel 60 V 7.8 mΩ standard level MOSFET

8.Revision history

Table 7.

Revision history

Release date20101028

Data sheet statusProduct data sheetProduct data sheet

Change notice--SupersedesPSMN7R6-60PS v.2-Document IDPSMN7R6-60PS v.3Modifications:PSMN7R6-60PS v.2

•

Various changes to content.

20100122

Product data sheetRev. 03 — 28 October 201011 of 14

NXP Semiconductors

PSMN7R6-60PS

N-channel 60 V 7.8 mΩ standard level MOSFET

9.Legal information

9.1

Data sheet status

Product status[3]DevelopmentQualificationProduction

Definition

This document contains data from the objective specification for product development.This document contains data from the preliminary specification.This document contains the product specification.

Document status[1][2]Objective [short] data sheetPreliminary [short] data sheetProduct [short] data sheet

[1][2][3]

Please consult the most recently issued document before initiating or completing a design.The term 'short data sheet' is explained in section \"Definitions\".

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.9.2Definitions

Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of

customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective

9.3Disclaimers

Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Product data sheetRev. 03 — 28 October 201012 of 14

NXP Semiconductors

PSMN7R6-60PS

N-channel 60 V 7.8 mΩ standard level MOSFET

product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the

9.4Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation.

10.Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Product data sheetRev. 03 — 28 October 201013 of 14

NXP Semiconductors

11.Contents

1Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . .11.1General description . . . . . . . . . . . . . . . . . . . . . .11.2Features and benefits. . . . . . . . . . . . . . . . . . . . .11.3Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .11.4Quick reference data . . . . . . . . . . . . . . . . . . . . .12Pinning information. . . . . . . . . . . . . . . . . . . . . . .23Ordering information. . . . . . . . . . . . . . . . . . . . . .24Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .25Thermal characteristics . . . . . . . . . . . . . . . . . . .46Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .57Package outline. . . . . . . . . . . . . . . . . . . . . . . . .108Revision history. . . . . . . . . . . . . . . . . . . . . . . . .119Legal information. . . . . . . . . . . . . . . . . . . . . . . .129.1Data sheet status . . . . . . . . . . . . . . . . . . . . . . .129.2Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .129.3Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .129.4Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .1310

Contact information. . . . . . . . . . . . . . . . . . . . . .13

PSMN7R6-60PS

N-channel 60 V 7.8 mΩ standard level MOSFET

Please be aware that important notices concerning this document and the product(s)described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 28 October 2010Document identifier: PSMN7R6-60PS

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