元器件交易网www.cecb2b.com
TetraFETD2211UKMETAL GATE RF SILICON FETMECHANICAL DATA
GOLD METALLISEDMULTI-PURPOSE SILICON
DMOS RF FET10W – 7.2V – 1GHz
SINGLE ENDED
DBC3 Package
PIN 1 SourcePIN 2 DrainPIN 3 DrainPIN 4 SourceDIMABCDEFGHIJKLMNOPQRmm6.470.75°0.761.142.6711.738.437.920.200.0.303.252.116.35SQ1.650.130.25FEATURES
•SIMPLIFIED AMPLIFIER DESIGN
•SUITABLE FOR BROAD BAND APPLICATIONS•LOWCrss
Tol..003.0035°.003.003.003.005.003.003.001.001.001.003.003.003.020max.003PIN 5 SourcePIN 6 GatePIN 7 GatePIN 8 SourceTol.0.080.085°0.080.080.080.130.080.080.020.020.020.080.080.080.51max0.07Inches.255.03045°.030.045.105.462.332.312.008.025.012.128.083.250SQ.065.0050.010•LOW NOISE• HIGH GAIN
APPLICATIONS
•HF/VHF/UHF COMMUNICATIONSfrom 1 MHz to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase= 25°C unlessotherwise stated)
PD
BVDSSBVGSSID(sat)TstgTj
Semelab plc.
Power DissipationDrain – Source Breakdown Voltage Gate – Source Breakdown VoltageDrain Current
Storage Temperature
Maximum Operating Junction Temperature
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.E-mail: sales@semelab.co.ukWebsite: http://www.semelab.co.uk70W40V±20V16A
–65 to 150°C
200°C
Prelim. 9/00
元器件交易网www.cecb2b.com
D2211UKELECTRICAL CHARACTERISTICS (Tcase= 25°C unlessotherwise stated)
ParameterTest ConditionsMin.BVDSSIDSSIGSSgfsGPShCissCossCrssDrain–SourceBreakdown VoltageZero Gate VoltageDrain CurrentGate Leakage CurrentForward Transconductance*Common Source Power GainDrain EfficiencyInput CapacitanceOutput CapacitanceReverse Transfer CapacitanceVGS= 0VDS= 12.5VVGS= 20VID= 10mAVDS= 10VPO= 10WVDS= 7.2Vf = 1GHzVDS= 0VGS= –5Vf = 1MHzf = 1MHzf = 1MHzVDS= 12.5VVGS= 0VDS= 12.5VVGS= 0IDQ= 0.8AID= 10mAVGS= 0VDS= 0VDS= VGSID= 0.8A11.4474020:140Typ.Max.UnitV887mAmAVSdB%—96808pFpFpFVGS(th)Gate Threshold Voltage*VSWRLoad Mismatch Tolerance* Pulse Test:Pulse Duration = 300 ms , Duty Cycle £2%THERMAL DATARTHj–caseThermal Resistance Junction – CaseMax. 2.5°C / WSemelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.ukWebsite: http://www.semelab.co.ukPrelim. 9/00
