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专利名称：High electron mobility transistor-based
terahertz wave space external modulator
发明人：Yaxin Zhang,Shen Qiao,Shixiong Liang,Ziqiang
Yang,Zhihong Feng
申请号：US142578申请日：20140520公开号：US09590739B2公开日：20170307
专利附图：
摘要：Terahertz external modulator based on high electron mobility transistorsbelongs to the field of electromagnetic functional devices technology. This invention
includes the semiconductor substrate (), the epitaxial layer (), and the modulation-unitarray (). The epitaxial layer () is set on the semiconductor substrate (). The modulation-unit (), the positive electrode (), and the negative electrode () are all set on the epitaxiallayer (). The modulation-unit array includes at least three units with each of them iscomposed of high electron mobility transistors and metamaterial-structure. The gates oftransistors connect to the negative electrode (), and the sources and drains connect tothe positive electrode (). This invention is used for manipulation of spatial transmissionterahertz waves. It could be operated at room temperatures, normal pressures, and non-vacuum condition. It does not need to load on the waveguide, thus is easy to package anduse.
申请人：UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
地址：Chengdu CN
国籍：CN
代理人：Gokalp Bayramoglu
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